Toshiba Develops High Performance CMOS Device Technology for 20nm Generation LSI

Toshiba unveiled the new technology at the 2009 International Electron Devices Meeting (IEDM) held in Baltimore, Maryland, U.S.A. from December 7 to December 9, one of the semiconductor industry's leading international conferences.

The new technology forms three layers on the surface of the channel: epitaxial silicon (Si), carbon-doped silicon (Si:C), and boron-doped Si:C. The top epitaxial Si layer functions as a low resistance path for the electrons and the holes; the intermediate Si:C acts as a defensive layer to prevent impurity diffusion; and the bottom boron-doped Si:C layer suppresses the fixed charge caused by the Si:C layer formation. Toshiba has confirmed that application of this novel structure achieves a boost in performance surpassing that of the conventional channel structure by 15 to 18%. This structure can be applied to both the nMOS and pMOS transistors to configure CMOS devices, with a simple process that adds a few layer-forming steps.

Previous R&D efforts have largely focused on nMOS transistors, in which channel impurities diffuse easily, or on examining the introduction of new solutions, such as SOI wafers and a 3D gate structure. Toshiba's new technology realizes a high-performance 20nm generation process without employing such new solutions, simply by optimizing impurity materials, device structures and processes.

Background and Targets

Today's bulk CMOS technology is seen as facing physical limits at around the 20nm generation. Problems such as degradation in electron mobility in the channel area and variation in threshold voltage will become obvious at that scale. These problems can be overcome by realizing a steep impurity distribution in the channel area, a structure that requires a low impurity density surface layer and a high impurity density substrate layer. This structure contributes better gate electrode control over the low-resistance area on the surface by obtaining fine switching of the current.

R&D in steep channel impurity profiles has largely been limited to the partial optimization of nMOS transistors, in which channel impurities easily diffuse, and effective technologies that can secure the overall CMOS performance in the 20nm generation has been a big challenge. As a result, the industry's attention has been directed to new materials or device structures, such as SOI wafers and a 3D gate structure. However, these solutions may result in new process steps that require extra facility investment or that lower productivity. Toshiba's newly developed technology , which is applicable to both the nMOS and pMOS transistors of CMOS devices, opens the way to taking bulk CMOS technology forward to the 20nm generation.


Source:www.physorg.com/news179592956.html